FD-DF80R12W1H3_B52 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FD-DF80R12W1H3_B52
Description	N-Channel; Maximum Power Dissipation (Abs): 215 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;
Datasheet	FD-DF80R12W1H3_B52 Datasheet
In Stock	560

NAME	DESCRIPTION
Other Names:	SP001092012
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	320 ns
Maximum Power Dissipation (Abs):	215 W
Maximum Collector-Emitter Voltage:	1200 V
Nominal Turn On Time (ton):	43 ns
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.4 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
560	-	-

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