Infineon Technologies - FD16001200R17KF6CB2NOSA1

  1. Home
  2. Infineon Technologies - FD16001200R17KF6CB2NOSA1
FD16001200R17KF6CB2NOSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FD16001200R17KF6CB2NOSA1
Description Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet FD16001200R17KF6CB2NOSA1 Datasheet
In Stock305
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
305 $1,758.210 $536,254.050

Popular Products

Category Top Products

FGD4536TM by Onsemi

FGD4536TM

Onsemi

FGD4536TM by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max power dissipation of 125W. It is designed for general purpose switching applications, featuring a small outline package style and a max operating temperature of 150°C.
SKM200GB126D by Semikron International

SKM200GB126D

Semikron International

SKM200GB126D by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.15V, IC of 260A, and toff of 650ns. Ideal for POWER CONTROL applications due to its high voltage rating of 1200V and fast ton at 300ns.
ISL9V3036S3ST by Onsemi

ISL9V3036S3ST

Onsemi

ISL9V3036S3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V and a max IC of 21A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -40 to 175 °C, and has a package style of SMALL OUTLINE.
IRG4BC20UD-SPBF by Infineon Technologies

IRG4BC20UD-SPBF

Infineon Technologies

IRG4BC20UD-SPBF by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, suitable for power control applications. This transistor offers a fast turn-off time of 320ns and can handle a max collector current of 13A.
FS150R12KT4PBPSA1 by Infineon Technologies

FS150R12KT4PBPSA1

Infineon Technologies

Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
FP35R12KT4B15BOSA1 by Infineon Technologies

FP35R12KT4B15BOSA1

Infineon Technologies

FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
FPF2G120BF07ASP by Fairchild Semiconductor

FPF2G120BF07ASP

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON;
IXXX300N60B3 by Littelfuse

IXXX300N60B3

Littelfuse

The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
IXYX40N450HV by IXYS Corporation

IXYX40N450HV

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 660 W; Maximum Collector Current (IC): 95 A; No. of Elements: 1;
IXXX200N60B3 by Littelfuse

IXXX200N60B3

Littelfuse

Littelfuse IXXX200N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 380A IC, and 1.7V VCE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast switching times (ton:140ns, toff:395ns). Suitable for various industrial uses requiring efficient power management in a single configuration package.
IHW20N120R5XKSA1 by Infineon Technologies

IHW20N120R5XKSA1

Infineon Technologies

IHW20N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 685ns and a turn-on time of 92ns, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals in a rectangular shape.
FF200R12KT4HOSA1 by Infineon Technologies

FF200R12KT4HOSA1

Infineon Technologies

Infineon Technologies' FF200R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a BUILT-IN DIODE. It has a max voltage of 1200V, max current of 320A, and turn-off time of 700ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.
IKQ75N120CS6XKSA1 by Infineon Technologies

IKQ75N120CS6XKSA1

Infineon Technologies

IKQ75N120CS6XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 150A, and Pmax of 880W. Ideal for power control applications due to its fast turn-off time (toff) of 428ns and high collector-emitter voltage of 1200V. Package style is flange mount with through-hole terminals.
IRG4PC50WPBF by International Rectifier

IRG4PC50WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;
IXDH30N120D1 by IXYS Corporation

IXDH30N120D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 435 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
HGTG20N60A4D by Fairchild Semiconductor

HGTG20N60A4D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Maximum Gate-Emitter Voltage: 20 V;
HGTD1N120BNS9A by Harris Semiconductor

HGTD1N120BNS9A

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5.3 A; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
IRG4BC30FPBF by Infineon Technologies

IRG4BC30FPBF

Infineon Technologies

IRG4BC30FPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a power dissipation of 100W, turn-off time of 640ns, and fall time of 270ns. Ideal for power control applications due to its single configuration and flange mount package style.
FGH40T120SMD by Micross Components

FGH40T120SMD

Micross Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 80 A; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD;
IRG4BC30KPBF by Infineon Technologies

IRG4BC30KPBF

Infineon Technologies

IRG4BC30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 380ns, making it ideal for MOTOR CONTROL applications. With a max power dissipation of 42W and operating temperature up to 150°C, this transistor offers reliable performance in various industrial settings.