Infineon Technologies - FD800R17HP4KB2BOSA2

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FD800R17HP4KB2BOSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD800R17HP4KB2BOSA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5200 W; Nominal Turn Off Time (toff): 2000 ns; Maximum Collector-Emitter Voltage: 1700 V;
Datasheet FD800R17HP4KB2BOSA2 Datasheet
In Stock34
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: NO
Nominal Turn Off Time (toff): 2000 ns
No. of Terminals: 7
Maximum Power Dissipation (Abs): 5200 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 670 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1700 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Maximum VCEsat: 2.25 V
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Pricing (USD)

Qty. Unit Price Ext. Price
34 $1,052.420 $35,782.280

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