Infineon Technologies - FD800R45KL3-K_B5

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FD800R45KL3-K_B5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD800R45KL3-K_B5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Terminal Form: UNSPECIFIED; Maximum Collector-Emitter Voltage: 4500 V;
Datasheet FD800R45KL3-K_B5 Datasheet
In Stock947
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 800 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.6 V
Surface Mount: NO
Nominal Turn Off Time (toff): 7350 ns
No. of Terminals: 9
Terminal Position: UPPER
Nominal Turn On Time (ton): 820 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X9
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 125 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -50 Cel
Maximum Collector-Emitter Voltage: 4500 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.85 V
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