Infineon Technologies - FD900R12IP4D

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FD900R12IP4D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD900R12IP4D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5100 W; Maximum Collector Current (IC): 900 A; Qualification: Not Qualified;
Datasheet FD900R12IP4D Datasheet
In Stock980
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 900 A
Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 1300 ns
No. of Terminals: 8
Maximum Power Dissipation (Abs): 5100 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 370 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: 2.05 V
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Pricing (USD)

Qty. Unit Price Ext. Price
980 $1.000 $980.000

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