Infineon Technologies - FF200R12KE3_B2

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FF200R12KE3_B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF200R12KE3_B2
Description N-Channel; Maximum Power Dissipation (Abs): 1050 W; Maximum Collector Current (IC): 295 A; Case Connection: ISOLATED; Nominal Turn On Time (ton): 400 ns; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet FF200R12KE3_B2 Datasheet
In Stock226
NAME DESCRIPTION
Maximum Collector Current (IC): 295 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 830 ns
Maximum Power Dissipation (Abs): 1050 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 400 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.15 V
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