Infineon Technologies - FF200R33KF2

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FF200R33KF2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF200R33KF2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2190 W; Maximum Collector Current (IC): 200 A; Maximum VCEsat: 4.25 V; No. of Elements: 1; Maximum Collector-Emitter Voltage: 3300 V;
Datasheet FF200R33KF2 Datasheet
In Stock408
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 2190 W
Maximum Collector-Emitter Voltage: 3300 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 4.25 V
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