Infineon Technologies - FF400R17KF6B2

  1. Home
  2. Infineon Technologies - FF400R17KF6B2
FF400R17KF6B2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF400R17KF6B2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 800 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 125 Cel;
Datasheet FF400R17KF6B2 Datasheet
In Stock808
NAME DESCRIPTION
Maximum Collector Current (IC): 800 A
Maximum Power Dissipation (Abs): 3700 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 2
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
808 - -

Popular Products

Category Top Products

IRG4PC50FDPBF by Infineon Technologies

IRG4PC50FDPBF

Infineon Technologies

IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
HGTG30N60C3D by Harris Semiconductor

HGTG30N60C3D

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Maximum Operating Temperature: 150 Cel;
APT85GR120J by Microchip Technology

APT85GR120J

Microchip Technology

APT85GR120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn-off time of 445ns and a built-in diode in a rectangular package style.
APT50GR120JD30 by Microchip Technology

APT50GR120JD30

Microchip Technology

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.
IRGP35B60PDPBF by International Rectifier

IRGP35B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
ISL9V3040P3 by Fairchild Semiconductor

ISL9V3040P3

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Shape: RECTANGULAR;
HGTG30N60A4D by Fairchild Semiconductor

HGTG30N60A4D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Maximum Gate-Emitter Threshold Voltage: 7 V;
FGA30T65SHD by Onsemi

FGA30T65SHD

Onsemi

FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.
IRGS14C40LPBF by Infineon Technologies

IRGS14C40LPBF

Infineon Technologies

IRGS14C40LPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 370V and a max collector current of 20A. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package style. The transistor has a max power dissipation of 125W and can operate at temperatures up to 175°C.
FS400R07A3E3BOMA1 by Infineon Technologies

FS400R07A3E3BOMA1

Infineon Technologies

FS400R07A3E3BOMA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 1.7V and can handle up to 500A of collector current. Ideal for power control applications, it offers fast turn-off time (430ns) and high power dissipation (1250W).
FGH60N60SMD-F085 by Onsemi

FGH60N60SMD-F085

Onsemi

FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.
FF300R17ME4BOSA1 by Infineon Technologies

FF300R17ME4BOSA1

Infineon Technologies

FF300R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and current of 375A, making it ideal for POWER CONTROL applications. With a turn-off time of 1520ns and turn-on time of 405ns, this RECTANGULAR package transistor operates at temperatures up to 175°C.
APT100GN60LDQ4G by Advanced Power Technology

APT100GN60LDQ4G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSFM-T3; Nominal Turn Off Time (toff): 435 ns;
SGL160N60UFDTU by Fairchild Semiconductor

SGL160N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 160 A; Terminal Position: SINGLE;
MG06100S-BR1MM by Littelfuse

MG06100S-BR1MM

Littelfuse

The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.
FF225R12ME4BOSA1 by Infineon Technologies

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.
IRG4BC30FDPBF by Infineon Technologies

IRG4BC30FDPBF

Infineon Technologies

IRG4BC30FDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 620ns and is designed for power control applications. With a max operating temperature of 150°C, it can handle up to 31A of collector current efficiently.
IGW08T120 by Infineon Technologies

IGW08T120

Infineon Technologies

IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.
APT85GR120JD60 by Microsemi

APT85GR120JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;