Infineon Technologies - FF400R33KF2

FF400R33KF2 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF400R33KF2
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 660 A; No. of Elements: 2; Maximum VCEsat: 4.25 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	FF400R33KF2 Datasheet
In Stock	571

FF400R33KF2 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	660 A
Maximum Power Dissipation (Abs):	4800 W
Maximum Collector-Emitter Voltage:	3300 V
No. of Elements:	2
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	4.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
571	-	-

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