Infineon Technologies - FF45MR12W1M1B11BOMA1

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FF45MR12W1M1B11BOMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF45MR12W1M1B11BOMA1
Description N-Channel; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 50 A; Terminal Form: UNSPECIFIED; Minimum Operating Temperature: -40 Cel;
Datasheet FF45MR12W1M1B11BOMA1 Datasheet
In Stock32
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Gate-Emitter Threshold Voltage: 20 V
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: NO
Nominal Turn Off Time (toff): 55300 ns
No. of Terminals: 10
Terminal Position: UPPER
Nominal Turn On Time (ton): 14100 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .045 ohm
Maximum Feedback Capacitance (Crss): 14 pF
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 1200 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 5.55 V
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