Infineon Technologies - FF600R12ME4B11BOSA1

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FF600R12ME4B11BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R12ME4B11BOSA1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4050 W; Maximum Collector Current (IC): 995 A; Maximum Operating Temperature: 175 Cel; Maximum VCEsat: 2.1 V; No. of Elements: 1;
Datasheet FF600R12ME4B11BOSA1 Datasheet
In Stock306
NAME DESCRIPTION
Maximum Collector Current (IC): 995 A
Maximum Power Dissipation (Abs): 4050 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.1 V
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