Infineon Technologies - FF600R17KF6B2

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FF600R17KF6B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R17KF6B2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum VCEsat: 3.1 V; Maximum Operating Temperature: 125 Cel;
Datasheet FF600R17KF6B2 Datasheet
In Stock180
NAME DESCRIPTION
Maximum Collector Current (IC): 600 A
Maximum Power Dissipation (Abs): 4800 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 2
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.1 V
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