FF6MR12W2M1_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF6MR12W2M1_B11
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Turn Off Time (toff): 92.6 ns; Terminal Form: UNSPECIFIED; Transistor Application: SWITCHING;
Datasheet	FF6MR12W2M1_B11 Datasheet
In Stock	411

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	39.1 ns
Maximum Drain Current (ID):	200 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	NO
No. of Terminals:	35
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	92.6 ns
JESD-30 Code:	R-XUFM-X35
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.00563 ohm
Maximum Feedback Capacitance (Crss):	112 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	1200 V
Reference Standard:	UL RECOGNIZED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
411	-	-

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