Infineon Technologies - FF800R17KF6CB2NOSA1

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FF800R17KF6CB2NOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF800R17KF6CB2NOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1240 ns; Nominal Turn On Time (ton): 540 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FF800R17KF6CB2NOSA1 Datasheet
In Stock775
NAME DESCRIPTION
Maximum Collector Current (IC): 1300 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1240 ns
Maximum Power Dissipation (Abs): 6250 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 540 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 3.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
775 $1,237.010 $958,682.750

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