Infineon Technologies - FS03MR12A6MA1B

FS03MR12A6MA1B by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS03MR12A6MA1B
Description N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: UNSPECIFIED;
Datasheet FS03MR12A6MA1B Datasheet
In Stock537
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 170 pF
Maximum Pulsed Drain Current (IDM): 800 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 39
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X39
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0037 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
537 - -

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