
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | FS03MR12A6MA1B |
Description | N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: UNSPECIFIED; |
Datasheet | FS03MR12A6MA1B Datasheet |
In Stock | 537 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | UNSPECIFIED |
Configuration: | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON CARBIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 170 pF |
Maximum Pulsed Drain Current (IDM): | 800 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
No. of Terminals: | 39 |
Minimum DS Breakdown Voltage: | 1200 V |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X39 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .0037 ohm |