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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FS03MR12A6MA1LB |
| Description | N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Transistor Element Material: SILICON CARBIDE; Transistor Application: SWITCHING; No. of Terminals: 39; |
| Datasheet | FS03MR12A6MA1LB Datasheet |
| In Stock | 660 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
448-FS03MR12A6MA1LB SP002725554 |
| Package Body Material: | UNSPECIFIED |
| Configuration: | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 170 pF |
| Maximum Pulsed Drain Current (IDM): | 800 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum Operating Temperature: | -40 Cel |
| No. of Terminals: | 39 |
| Minimum DS Breakdown Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X39 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .0037 ohm |









