Infineon Technologies - FS100R17N3E4BOSA1

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FS100R17N3E4BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS100R17N3E4BOSA1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet FS100R17N3E4BOSA1 Datasheet
In Stock549
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 600 W
Maximum Collector-Emitter Voltage: 1700 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.3 V
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Pricing (USD)

Qty. Unit Price Ext. Price
549 $108.850 $59,758.650

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