Infineon Technologies - FS75R12KE3B3NOSA1

HGTG40N60B3 by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 70A. It has a nominal turn-off time of 385ns and a turn-on time of 82ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-power applications operating at temperatures up to 150°C.

FP25R12W2T4 by Infineon Technologies is an N-CHANNEL IGBT transistor with 1200V VCE, 39A IC, and 175W power dissipation. It is used for POWER CONTROL applications due to its 685ns turn-off time and complex configuration. The transistor's silicon material and isolated case connection make it suitable for high-power operations at up to 175°C.

Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Transistor Application: MOTOR CONTROL;

APT65GP60JDQ2 by Microchip Technology is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 130A. It has a nominal turn-off time of 220ns and is designed for power control applications. The transistor comes in a rectangular package style with flange mount, making it suitable for high-power dissipation up to 431W at an operating temperature of 150°C.

Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.

AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Transistor Element Material: SILICON;

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; Maximum VCEsat: 2.25 V;

NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

IKW40N120T2XK by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 75A. It is commonly used for power control applications due to its fast nominal turn on time of 60ns and built-in diode.

FS50R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 140 ns, suitable for high-power applications. With a Vce of 1200V and IC of 75A, it operates at up to 150°C making it ideal for industrial power systems.

STGB3NC120HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 14A IC, and 680ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.

FGH40N60SFDTU-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.

IRGR2B60KDTRLPBF by Infineon Technologies is an N-CHANNEL IGBT with 25 ns rise time and 75 ns fall time. It has a max power dissipation of 35 W, operating temperature up to 150°C, and can handle a collector-emitter voltage of 600 V. Ideal for applications requiring high-speed switching and efficient power control in various electronic systems.

Infineon's FP25R12W2T4PB11BPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 39A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its complex configuration, fast turn-on time (47ns), and isolated case connection for high-power operations at up to 175°C.

IXGN50N120C3H1 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 4.2V, IC of 95A, and Ptot of 460W. Ideal for power control applications, it operates at -55 to 150°C with a VCEmax of 1200V.

FS300R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, max IC of 500A, and toff of 810ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems due to its max VCE of 1200V and fast ton of 400ns.