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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FS820R08A6P2BBPSA1 |
Description | N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 820 A; Terminal Position: UPPER; |
Datasheet | FS820R08A6P2BBPSA1 Datasheet |
In Stock | 8 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 820 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 1110 ns |
No. of Terminals: | 33 |
Maximum Power Dissipation (Abs): | 714 W |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 380 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X33 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Maximum Collector-Emitter Voltage: | 750 V |
Maximum Gate-Emitter Voltage: | 20 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 1.35 V |