Infineon Technologies - FZ1200R16KF4_S1

  1. Home
  2. Infineon Technologies - FZ1200R16KF4_S1
FZ1200R16KF4_S1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R16KF4_S1
Description N-Channel; Maximum Power Dissipation (Abs): 7800 W; Maximum Collector Current (IC): 1200 A; Maximum Collector-Emitter Voltage: 1600 V; Nominal Turn On Time (ton): 1000 ns; Minimum Operating Temperature: -40 Cel;
Datasheet FZ1200R16KF4_S1 Datasheet
In Stock1,628
NAME DESCRIPTION
Maximum Collector Current (IC): 1200 A
Maximum Power Dissipation (Abs): 7800 W
Maximum Collector-Emitter Voltage: 1600 V
Nominal Turn On Time (ton): 1000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,628 - -

Popular Products

Category Top Products

SGL50N60RUFDTU by Onsemi

SGL50N60RUFDTU

Onsemi

SGL50N60RUFDTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 80A. It is designed for MOTOR CONTROL applications, featuring a single configuration with built-in diode. With a package style of FLANGE MOUNT and terminal form THROUGH-HOLE, it offers fast switching times with turn-off time of 329ns and fall time of 160ns.
IRGR4045DPBF by Infineon Technologies

IRGR4045DPBF

Infineon Technologies

IRGR4045DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 77W. It has a single configuration with built-in diode, ideal for power control applications requiring fast switching times (tr: 15ns, tf: 22ns). This surface-mount transistor operates at temperatures up to 175°C.
FF150R12RT4HOSA1 by Infineon Technologies

FF150R12RT4HOSA1

Infineon Technologies

FF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a toff of 490 ns, and ton of 185 ns. It is used for POWER CONTROL applications, featuring a max Vce of 1200V and operating temperature of 175°C in a FLANGE MOUNT package.
TSG60N100CEC0 by Taiwan Semiconductor

TSG60N100CEC0

Taiwan Semiconductor

TSG60N100CEC0 by Taiwan Semiconductor is an N-CHANNEL IGBT with 1000V max collector-emitter voltage and 60A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 1510ns.
IRG4PC50KDPBF by International Rectifier

IRG4PC50KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 52 A; Terminal Form: THROUGH-HOLE;
IRGB4062DPBF by International Rectifier

IRGB4062DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 48 A; JESD-609 Code: e3;
HGTP10N120BN by Intersil

HGTP10N120BN

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Terminal Finish: Tin/Lead (Sn/Pb);
FS150R12KT3BOSA1 by Infineon Technologies

FS150R12KT3BOSA1

Infineon Technologies

Infineon FS150R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current rating of 200A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
IKZ75N65ES5XKSA1 by Infineon Technologies

IKZ75N65ES5XKSA1

Infineon Technologies

IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
IRG4PC50F-EPBF by International Rectifier

IRG4PC50F-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; No. of Terminals: 3;
CM200DY-12NF by Powerex

CM200DY-12NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified;
IRG7PH50K10DPBF by Infineon Technologies

IRG7PH50K10DPBF

Infineon Technologies

Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.
APT85GR120B2 by Microsemi

APT85GR120B2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;
BSM50GP120BOSA1 by Infineon Technologies

BSM50GP120BOSA1

Infineon Technologies

Infineon Technologies' BSM50GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 430ns and a max operating temperature of 150°C. Ideal for applications requiring high current handling capabilities in complex configurations.
IKQ100N60TXKSA1 by Infineon Technologies

IKQ100N60TXKSA1

Infineon Technologies

IKQ100N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 160A. It is designed for power control applications and has a nominal turn-off time of 393ns.
IRGB4056DPBF by Infineon Technologies

IRGB4056DPBF

Infineon Technologies

IRGB4056DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 24A. It has a Power Dissipation of 140W, making it suitable for POWER CONTROL applications requiring fast switching times (tr: 24ns, tf: 31ns) and high efficiency in a RECTANGULAR package.
IKP08N65H5XKSA1 by Infineon Technologies

IKP08N65H5XKSA1

Infineon Technologies

IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.
FS75R12KE3BOSA1 by Infineon Technologies

FS75R12KE3BOSA1

Infineon Technologies

FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
FB30R06W1E3_B1 by Infineon Technologies

FB30R06W1E3_B1

Infineon Technologies

FB30R06W1E3_B1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max VCEsat of 2V. It is designed for power control applications, offering a nominal turn off time of 245ns and a max collector-emitter voltage of 600V. With a package style of FLANGE MOUNT, it can handle up to 115W power dissipation at a max operating temperature of 175°C.
FGH40N60SFDTU by Onsemi

FGH40N60SFDTU

Onsemi

FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.