Infineon Technologies - FZ1800R16KF4_S1

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FZ1800R16KF4_S1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1800R16KF4_S1
Description N-Channel; Maximum Power Dissipation (Abs): 11000 W; Maximum Collector Current (IC): 1800 A; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Collector-Emitter Voltage: 1600 V;
Datasheet FZ1800R16KF4_S1 Datasheet
In Stock898
NAME DESCRIPTION
Maximum Collector Current (IC): 1800 A
Maximum Power Dissipation (Abs): 11000 W
Maximum Collector-Emitter Voltage: 1600 V
Nominal Turn On Time (ton): 1000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
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