Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FZ600R65KF1 |
| Description | N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11400 W; Maximum Collector Current (IC): 1200 A; No. of Elements: 3; |
| Datasheet | FZ600R65KF1 Datasheet |
| In Stock | 676 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 1200 A |
| Configuration: | PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| Nominal Turn Off Time (toff): | 6500 ns |
| No. of Terminals: | 9 |
| Maximum Power Dissipation (Abs): | 11400 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 1120 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X9 |
| No. of Elements: | 3 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 125 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 6300 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 4.9 V |
