Infineon Technologies - FZ800R12KS4

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FZ800R12KS4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ800R12KS4
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 6900 W; Maximum Collector Current (IC): 1200 A; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 3.7 V;
Datasheet FZ800R12KS4 Datasheet
In Stock489
NAME DESCRIPTION
Maximum Collector Current (IC): 1200 A
Maximum Power Dissipation (Abs): 6900 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.7 V
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