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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | GTVA101K42EVV1R2 |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: NO; Minimum Power Gain (Gp): 17 dB; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 225 Cel; |
| Datasheet | GTVA101K42EVV1R2 Datasheet |
| In Stock | 425 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 17 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMMON SOURCE, 2 ELEMENTS |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Maximum Drain Current (ID): | 48 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 125 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
