Infineon Technologies - GTVA101K42EVV1R2

GTVA101K42EVV1R2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number GTVA101K42EVV1R2
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: NO; Minimum Power Gain (Gp): 17 dB; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 225 Cel;
Datasheet GTVA101K42EVV1R2 Datasheet
In Stock425
NAME DESCRIPTION
Minimum Power Gain (Gp): 17 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Maximum Drain Current (ID): 48 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 4
Minimum DS Breakdown Voltage: 125 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
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