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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | GTVA101K42EVV1R2 |
Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: NO; Minimum Power Gain (Gp): 17 dB; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 225 Cel; |
Datasheet | GTVA101K42EVV1R2 Datasheet |
In Stock | 425 |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 17 dB |
Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMMON SOURCE, 2 ELEMENTS |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Maximum Drain Current (ID): | 48 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 125 V |
Terminal Position: | DUAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-CDFM-F4 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | L BAND |
Maximum Operating Temperature: | 225 Cel |
Case Connection: | SOURCE |
Peak Reflow Temperature (C): | NOT SPECIFIED |