Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | GTVA104001FAV1R2XTMA1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 150 V; Maximum Operating Temperature: 225 Cel; |
| Datasheet | GTVA104001FAV1R2XTMA1 Datasheet |
| In Stock | 947 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 150 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLATPACK |
| JESD-30 Code: | S-CDFP-F2 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









