Infineon Technologies - GTVA107001ECV1R0

GTVA107001ECV1R0 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number GTVA107001ECV1R0
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 225 Cel; Minimum DS Breakdown Voltage: 150 V; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet GTVA107001ECV1R0 Datasheet
In Stock196
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
196 $1,212.800 $237,708.800

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