Infineon Technologies - GTVA261701FAV1R0

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GTVA261701FAV1R0 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number GTVA261701FAV1R0
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Case Connection: SOURCE; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet GTVA261701FAV1R0 Datasheet
In Stock836
NAME DESCRIPTION
Minimum Power Gain (Gp): 16 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 7.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: S-CDFP-F2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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