HFA35HB60SCX by Infineon Technologies | Diodes

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	HFA35HB60SCX
Description	RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: PIN/PEG; No. of Terminals: 3; Surface Mount: NO; Package Shape: SQUARE;
Datasheet	HFA35HB60SCX Datasheet
In Stock	840

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
No. of Phases:	1
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	22 A
Maximum Repetitive Peak Reverse Voltage:	600 V
JEDEC-95 Code:	TO-254AA
Surface Mount:	NO
Maximum Non Repetitive Peak Forward Current:	225 A
Diode Element Material:	SILICON
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Technology:	AVALANCHE
JESD-30 Code:	S-XSFM-P3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	PIN/PEG
Additional Features:	SNUBBER DIODE
Case Connection:	ISOLATED
Application:	ULTRA FAST SOFT RECOVERY
Maximum Reverse Recovery Time:	.09 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
840	-	-

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;