Infineon Technologies - HYB25R128160C-745

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HYB25R128160C-745 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number HYB25R128160C-745
Description RAMBUS DRAM; No. of Terminals: 62; Package Code: TBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; No. of Functions: 1;
Datasheet HYB25R128160C-745 Datasheet
In Stock455
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 8MX16
Output Characteristics: 3-STATE
Maximum Seated Height: 1.05 mm
Access Mode: BLOCK ORIENTED PROTOCOL
Minimum Supply Voltage (Vsup): 2.37 V
Sub-Category: DRAMs
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 62
Maximum Clock Frequency (fCLK): 711 MHz
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE
Technology: CMOS
JESD-30 Code: R-PBGA-B62
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: TBGA
Width: 10.5 mm
Input/Output Type: COMMON
No. of Ports: 1
Memory Density: 134217728 bit
Self Refresh: YES
Memory IC Type: RAMBUS DRAM
JESD-609 Code: e0
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: BGA62,12X9,40/32
Refresh Cycles: 16384
Length: 11 mm
Maximum Access Time: 45 ns
No. of Words Code: 8M
Nominal Supply Voltage / Vsup (V): 2.5
Additional Features: SELF CONTAINED REFRESH
Terminal Pitch: .8 mm
Maximum Supply Voltage (Vsup): 2.63 V
Power Supplies (V): 1.8/2.5,2.5
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Pricing (USD)

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