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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | HYBRIDKIT1PINFINTOBO1 |
| Description | Limited Part Number Data; Case Connection: ISOLATED; Polarity/Channel Type: N-Channel; Power Dissipation-Max (Abs): 750 W; Gate-emitter Thr Voltage-Max: 6.5 V; VCEsat-Max: 1.9 V; |
| Datasheet | HYBRIDKIT1PINFINTOBO1 Datasheet |
| In Stock | 570 |
| NAME | DESCRIPTION |
|---|---|
| Polarity/Channel Type: | N-Channel |
| Collector-emitter Voltage-Max: | 650 V |
| Transistor Element Material: | SILICON |
| Gate-emitter Voltage-Max: | 20 V |
| Operating Temperature-Min: | -40 Cel |
| Collector Current-Max (IC): | 500 A |
| Gate-emitter Thr Voltage-Max: | 6.5 V |
| Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Turn-off Time-Nom (toff): | 580 ns |
| Turn-on Time-Nom (ton): | 200 ns |
| Power Dissipation-Max (Abs): | 750 W |
| VCEsat-Max: | 1.9 V |
| Case Connection: | ISOLATED |
| Operating Temperature-Max: | 150 Cel |
