Infineon Technologies - HYBRIDKIT1PINFINTOBO1

HYBRIDKIT1PINFINTOBO1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	HYBRIDKIT1PINFINTOBO1
Description	Limited Part Number Data; Case Connection: ISOLATED; Polarity/Channel Type: N-Channel; Power Dissipation-Max (Abs): 750 W; Gate-emitter Thr Voltage-Max: 6.5 V; VCEsat-Max: 1.9 V;
Datasheet	HYBRIDKIT1PINFINTOBO1 Datasheet
In Stock	570

HYBRIDKIT1PINFINTOBO1 Technical Details

NAME	DESCRIPTION
Polarity/Channel Type:	N-Channel
Collector-emitter Voltage-Max:	650 V
Transistor Element Material:	SILICON
Gate-emitter Voltage-Max:	20 V
Operating Temperature-Min:	-40 Cel
Collector Current-Max (IC):	500 A
Gate-emitter Thr Voltage-Max:	6.5 V
Time@Peak Reflow Temperature-Max (s):	NOT SPECIFIED
Peak Reflow Temperature (Cel):	NOT SPECIFIED
Turn-off Time-Nom (toff):	580 ns
Turn-on Time-Nom (ton):	200 ns
Power Dissipation-Max (Abs):	750 W
VCEsat-Max:	1.9 V
Case Connection:	ISOLATED
Operating Temperature-Max:	150 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
570	-	-

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