HYE18M512160AF-8 by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	HYE18M512160AF-8
Description	DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet	HYE18M512160AF-8 Datasheet
In Stock	25

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.0005 Amp
Organization:	32MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	75 mA
No. of Terminals:	60
Maximum Clock Frequency (fCLK):	100 MHz
No. of Words:	33554432 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B60
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	FBGA
Input/Output Type:	COMMON
Memory Density:	536870912 bit
Sequential Burst Length:	2,4,8,16
Memory IC Type:	DDR1 DRAM
Minimum Operating Temperature:	-25 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA60,9X10,32
Refresh Cycles:	8192
Interleaved Burst Length:	2,4,8,16
Maximum Access Time:	7 ns
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	1.8
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Power Supplies (V):	1.8

Pricing (USD)

Qty.	Unit Price	Ext. Price
25	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;