Infineon Technologies - IAUC26N10S5L245ATMA1

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IAUC26N10S5L245ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IAUC26N10S5L245ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; No. of Terminals: 8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IAUC26N10S5L245ATMA1 Datasheet
In Stock519
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 26 A
Maximum Pulsed Drain Current (IDM): 104 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 40 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0378 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 18 mJ
Maximum Feedback Capacitance (Crss): 12 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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Pricing (USD)

Qty. Unit Price Ext. Price
519 $0.355 $184.245

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