IAUT200N08S5N023ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IAUT200N08S5N023ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; JESD-30 Code: R-PSSO-F8; Operating Mode: ENHANCEMENT MODE;
Datasheet	IAUT200N08S5N023ATMA1 Datasheet
In Stock	7,998

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	200 A
Maximum Pulsed Drain Current (IDM):	800 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0023 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	330 mJ
Other Names:	IAUT200N08S5N023ATMA1TR IAUT200N08S5N023CT-ND IAUT200N08S5N023DKR IAUT200N08S5N023TR-ND IAUT200N08S5N023 2156-IAUT200N08S5N023ATMA1 IAUT200N08S5N023DKR-ND IAUT200N08S5N023ATMA1DKR IAUT200N08S5N023ATMA1CT IAUT200N08S5N023CT IFEINFIAUT200N08S5N023ATMA1 IAUT200N08S5N023TR SP001688332
Maximum Feedback Capacitance (Crss):	68 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
7,998	-	-

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