IDH12G65C6XKSA1 by Infineon Technologies | Diodes

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IDH12G65C6XKSA1
Description	RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;
Datasheet	IDH12G65C6XKSA1 Datasheet
In Stock	322

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	1.35 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Surface Mount:	NO
Terminal Finish:	TIN
Maximum Reverse Current:	40 uA
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Technology:	SCHOTTKY
JESD-30 Code:	R-PSFM-T2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Case Connection:	CATHODE
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	650 V
JEDEC-95 Code:	TO-220AC
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Non Repetitive Peak Forward Current:	51 A
Diode Element Material:	SILICON
Maximum Power Dissipation:	81 W
Additional Features:	PD-CASE
Application:	EFFICIENCY

Pricing (USD)

Qty.	Unit Price	Ext. Price
322	-	-

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;