IFF450B12ME4S8P_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IFF450B12ME4S8P_B11
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; No. of Elements: 2; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet	IFF450B12ME4S8P_B11 Datasheet
In Stock	264

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	450 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.35 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	690 ns
No. of Terminals:	13
Terminal Position:	UPPER
Nominal Turn On Time (ton):	250 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X13
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
264	-	-

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