IFS200B12N3E4_B31 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IFS200B12N3E4_B31
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 280 A; Package Shape: RECTANGULAR;
Datasheet	IFS200B12N3E4_B31 Datasheet
In Stock	869

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	280 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.35 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	528 ns
No. of Terminals:	41
Maximum Power Dissipation (Abs):	940 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	185 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X41
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
869	-	-

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