Infineon Technologies - IFS75B12N3E4B39BOSA1

  1. Home
  2. Infineon Technologies - IFS75B12N3E4B39BOSA1
IFS75B12N3E4B39BOSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IFS75B12N3E4B39BOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 385 W; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Maximum VCEsat: 2.15 V;
Datasheet IFS75B12N3E4B39BOSA1 Datasheet
In Stock701
NAME DESCRIPTION
Nominal Turn Off Time (toff): 570 ns
Maximum Power Dissipation (Abs): 385 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 185 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.15 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
701 - -

Popular Products

Category Top Products

FZ400R12KE4HOSA1 by Infineon Technologies

FZ400R12KE4HOSA1

Infineon Technologies

FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.
IRG4BC30FD-SPBF by Infineon Technologies

IRG4BC30FD-SPBF

Infineon Technologies

IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.
IRGP4266DPBF by International Rectifier

IRGP4266DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FGH40T120SMD by Micross Components

FGH40T120SMD

Micross Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 80 A; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD;
IXGH72N60A3 by IXYS Corporation

IXGH72N60A3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 540 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 885 ns;
IXXX160N65B4 by Littelfuse

IXXX160N65B4

Littelfuse

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.
IRG4RC10SDPBF by Infineon Technologies

IRG4RC10SDPBF

Infineon Technologies

IRG4RC10SDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 14A. It is designed for POWER CONTROL applications, featuring a small outline package style and built-in diode for efficient performance in power electronics systems.
IKQ75N120CT2XKSA1 by Infineon Technologies

IKQ75N120CT2XKSA1

Infineon Technologies

IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.
IKW75N60T by Infineon Technologies

IKW75N60T

Infineon Technologies

IKW75N60T by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a power dissipation of 428W and turn-off time of 401ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities.
FGD5T120SH by Fairchild Semiconductor

FGD5T120SH

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
FS200R12KT4RB11BOSA1 by Infineon Technologies

FS200R12KT4RB11BOSA1

Infineon Technologies

Infineon's FS200R12KT4RB11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and max current of 280A for power control applications. UL approved, it features a turn off time of 600ns and turn on time of 190ns in a flange mount package.
FS200R12PT4BOSA1 by Infineon Technologies

FS200R12PT4BOSA1

Infineon Technologies

FS200R12PT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements and built-in diode and thermistor. It is used for power control applications, with a max collector-emitter voltage of 1200V and a max collector current of 280A.
FGH40T120SMD by Fairchild Semiconductor

FGH40T120SMD

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
NGTB25N120FL3WG by Onsemi

NGTB25N120FL3WG

Onsemi

NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
FF1400R12IP4BOSA1 by Infineon Technologies

FF1400R12IP4BOSA1

Infineon Technologies

FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
FS450R17KE3 by Eupec & Kg

FS450R17KE3

Eupec & Kg

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 605 A; No. of Terminals: 29; Terminal Position: UPPER;
IRG4BC30SPBF by International Rectifier

IRG4BC30SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; No. of Elements: 1;
FF450R12ME3BOSA1 by Infineon Technologies

FF450R12ME3BOSA1

Infineon Technologies

FF450R12ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 600A, and turn-off time of 810ns. Ideal for applications requiring high power switching in industrial automation and renewable energy systems.
IXXH50N60C3D1 by Littelfuse

IXXH50N60C3D1

Littelfuse

IXXH50N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 100A. It is commonly used for power control applications due to its high power dissipation of 600W and fast nominal turn off time (toff) of 170ns.
IRG4PC30FPBF by International Rectifier

IRG4PC30FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;