Infineon Technologies - IGB01N120H2ATMA1

IGB01N120H2ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGB01N120H2ATMA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3.2 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet IGB01N120H2ATMA1 Datasheet
In Stock692
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3.2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
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