Infineon Technologies - IGC06R60D

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IGC06R60D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC06R60D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Package Style (Meter): UNCASED CHIP;
Datasheet IGC06R60D Datasheet
In Stock510
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Additional Features: LOW CONDUCTION LOSS
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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