Infineon Technologies - IGC189T120T8RLX1SA3

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IGC189T120T8RLX1SA3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC189T120T8RLX1SA3
Description N-Channel; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.3 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
Datasheet IGC189T120T8RLX1SA3 Datasheet
In Stock542
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
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