Infineon Technologies - IGC189T120T8RLX1SA3

  1. Home
  2. Infineon Technologies - IGC189T120T8RLX1SA3
IGC189T120T8RLX1SA3 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IGC189T120T8RLX1SA3
Description N-Channel; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.3 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
Datasheet IGC189T120T8RLX1SA3 Datasheet
In Stock542
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
542 - -

Popular Products

Category Top Products

FGH60N60SMD_F085 by Fairchild Semiconductor

FGH60N60SMD_F085

Fairchild Semiconductor

Fairchild Semiconductor's FGH60N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 66ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a plastic/epoxy package. The transistor has a nominal turn-off time of 139ns and meets AEC-Q101 standards.
CM200DY-12NF by Mitsubishi Electric

CM200DY-12NF

Mitsubishi Electric

CM200DY-12NF by Mitsubishi Electric is an N-CHANNEL IGBT with 2 elements and a built-in diode. It has a max VCEsat of 2.2V and can handle a max collector current (IC) of 200A. This IGBT is commonly used for power control applications.
IRG4BC40UPBF by International Rectifier

IRG4BC40UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
6MS24017P43W41646NOSA1 by Infineon Technologies

6MS24017P43W41646NOSA1

Infineon Technologies

6MS24017P43W41646NOSA1 by Infineon Technologies is an N-Channel IGBT with 12 elements. It has a max collector-emitter voltage of 1700V and operates b/w -25°C to 55°C. Ideal for power control applications, this surface-mount transistor features a silicon element in a rectangular package style.
IKW60N60H3FKSA1 by Infineon Technologies

IKW60N60H3FKSA1

Infineon Technologies

IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
SGL50N60RUFDTU by Fairchild Semiconductor

SGL50N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
NGTB30N120LWG by Onsemi

NGTB30N120LWG

Onsemi

NGTB30N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 560W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 596ns.
IXXX300N60B3 by IXYS Corporation

IXXX300N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
FGL60N100BNTD by Fairchild Semiconductor

FGL60N100BNTD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IRG4BC30UPBF by International Rectifier

IRG4BC30UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 320 ns;
IXGH60N60C3D1 by Littelfuse

IXGH60N60C3D1

Littelfuse

IXGH60N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector current (IC) of 75A. It is commonly used in power control applications due to its high power dissipation of 380W and max operating temperature of 150°C.
FGH40N60UFTU by Fairchild Semiconductor

FGH40N60UFTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FS150R12KT4B11BOSA1 by Infineon Technologies

FS150R12KT4B11BOSA1

Infineon Technologies

FS150R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and a nominal turn-off time of 605ns. This power control transistor is designed for applications requiring fast switching speeds in bridge configurations.
IXXX300N60C3 by Littelfuse

IXXX300N60C3

Littelfuse

IXXX300N60C3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 510A IC, and 2300W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 278ns and operates b/w -55 to 175 °C temperatures.
FGH40N60SFDTU by Onsemi

FGH40N60SFDTU

Onsemi

FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.
HGTP10N120BN by Onsemi

HGTP10N120BN

Onsemi

The Onsemi HGTP10N120BN is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. Ideal for MOTOR CONTROL applications, it has a rise time of 15ns and can handle up to 35A collector current.
SKM200GB126D by Semikron International

SKM200GB126D

Semikron International

SKM200GB126D by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.15V, IC of 260A, and toff of 650ns. Ideal for POWER CONTROL applications due to its high voltage rating of 1200V and fast ton at 300ns.
ISL9V3040D3ST by Onsemi

ISL9V3040D3ST

Onsemi

ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
STGP35HF60W by STMicroelectronics

STGP35HF60W

STMicroelectronics

STMicroelectronics' STGP35HF60W is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W power dissipation. It operates up to 150°C and has a gate-emitter threshold voltage of 5.75V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
IRG4BC20UDPBF by International Rectifier

IRG4BC20UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; JEDEC-95 Code: TO-220AB;