Infineon Technologies - IGC50T120T8RLX1SA3

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IGC50T120T8RLX1SA3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC50T120T8RLX1SA3
Description N-Channel; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1200 V; Maximum VCEsat: 2.07 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IGC50T120T8RLX1SA3 Datasheet
In Stock270
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.07 V
Minimum Operating Temperature: -40 Cel
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