IGP01N120H2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IGP01N120H2
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Collector Current (IC): 3.2 A; Maximum Gate-Emitter Threshold Voltage: 3.9 V;
Datasheet	IGP01N120H2 Datasheet
In Stock	10,412

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3.2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Gate-Emitter Threshold Voltage:	3.9 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	28 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	NPN
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,412	-	-

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