Infineon Technologies - IHW15N120R

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IHW15N120R by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHW15N120R
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 405 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IHW15N120R Datasheet
In Stock351
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Maximum Power Dissipation (Abs): 405 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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