IKQ100N60T by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IKQ100N60T
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 160 A; Terminal Finish: TIN;
Datasheet	IKQ100N60T Datasheet
In Stock	474

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	160 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.7 V
Surface Mount:	NO
Terminal Finish:	TIN
Nominal Turn Off Time (toff):	393 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	714 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	83 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
474	$23.100	$10,949.400

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