Infineon Technologies - IKZ75N65EH5XKSA1

IKZ75N65EH5XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKZ75N65EH5XKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 395 W; Maximum Collector Current (IC): 90 A; Transistor Application: POWER CONTROL;
Datasheet IKZ75N65EH5XKSA1 Datasheet
In Stock620
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 90 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Surface Mount: NO
Terminal Finish: TIN
Nominal Turn Off Time (toff): 415 ns
No. of Terminals: 4
Maximum Power Dissipation (Abs): 395 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 37 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
620 $3.550 $2,201.000

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