IL755B-1-X009T by Infineon Technologies | Optoelectronics

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IL755B-1-X009T
Description	AC INPUT-DARLINGTON OUTPUT OPTOCOUPLER; No. of Elements: 1; Maximum Forward Current: .06 A; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 60 V; Maximum Operating Temperature: 100 Cel;
Datasheet	IL755B-1-X009T Datasheet
In Stock	84,472

NAME	DESCRIPTION
Maximum Dark Current:	100 nA
Optoelectronic Type:	AC INPUT-DARLINGTON OUTPUT OPTOCOUPLER
Configuration:	SINGLE
Nominal Current Transfer Ratio:	750 %
Maximum Forward Current:	.06 A
No. of Elements:	1
Additional Features:	UL RECOGNIZED
Maximum Operating Temperature:	100 Cel
Minimum Operating Temperature:	-55 Cel
Minimum Collector-emitter Breakdown Voltage:	60 V
Maximum Isolation Voltage:	5300 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
84,472	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

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FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

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2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;