IM240S6Y1BAKSA1 by Infineon Technologies | Other Function Semiconductors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IM240S6Y1BAKSA1
Description	AC MOTOR CONTROLLER; Temperature Grade: AUTOMOTIVE; No. of Terminals: 23; Package Shape: RECTANGULAR; Surface Mount: NO; Maximum Output Current: 6 A;
Datasheet	IM240S6Y1BAKSA1 Datasheet
In Stock	635

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Width (mm):	12 mm
Maximum Seated Height:	3.15 mm
Maximum Output Current:	6 A
Minimum Supply Voltage (Vsup):	13.5 V
Maximum Supply Current (Isup):	3 mA
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
No. of Terminals:	23
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Other IC type:	AC MOTOR CONTROLLER
Length:	29 mm
Technology:	HYBRID
JESD-30 Code:	R-XDMA-T23
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	125 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Nominal Supply Voltage (Vsup):	15 V
Temperature Grade:	AUTOMOTIVE
Maximum Supply Voltage (Vsup):	16.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
635	-	-

KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.

INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;