Infineon Technologies - IMZ120R030M1HXKSA1

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IMZ120R030M1HXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IMZ120R030M1HXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
Datasheet IMZ120R030M1HXKSA1 Datasheet
In Stock4,462
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 56 A
Maximum Pulsed Drain Current (IDM): 150 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 227 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .056 ohm
Maximum Feedback Capacitance (Crss): 13 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
Maximum Drain Current (Abs) (ID): 56 A
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