Infineon Technologies - IPB011N04LGATMA1

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IPB011N04LGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB011N04LGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .0014 ohm;
Datasheet IPB011N04LGATMA1 Datasheet
In Stock9,604
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 1260 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 525 mJ
Other Names: IPB011N04L GCT
IPB011N04L GDKR
IPB011N04L GTR-ND
IPB011N04L GCT-ND
SP000391498
IPB011N04L GDKR-ND
IPB011N04LGATMA1CT
IPB011N04LG
IPB011N04L G
IPB011N04L GTR
IPB011N04L G-ND
IPB011N04LGATMA1DKR
IPB011N04LGATMA1TR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
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