Infineon Technologies - IPB014N06NATMA1

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IPB014N06NATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB014N06NATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; No. of Elements: 1; Maximum Drain Current (ID): 34 A;
Datasheet IPB014N06NATMA1 Datasheet
In Stock13,776
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 34 A
Maximum Pulsed Drain Current (IDM): 720 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 420 mJ
Other Names: SP000917408
IPB014N06NDKR-ND
IPB014N06NATMA1DKR
IPB014N06NATMA1CT
IPB014N06NDKR
IPB014N06N
IPB014N06NTR
IPB014N06NTR-ND
IPB014N06NCT
IPB014N06NATMA1TR
IPB014N06NCT-ND
IPB014N06N-ND
JEDEC-95 Code: TO-263
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
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